Chipworks Analyzes Process Technology Innovations
Chipworks
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16 Apr 2003 16:26:50 -0400
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<td width="752"> <p class="text"><font size="2" face="Arial, Helvetica, sans-serif">Be
competitive, rank your technology, and see what the competition
is doing in the following just released structural analysis reports.</font></p>
<table width="753" border="1" cellpadding="3" cellspacing="0" bordercolor="#666666">
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<td width="539" height="1097" class="text">
<p class="text"><strong><font size="2" face="Arial, Helvetica, sans-serif">Integrated Circuits
</font></strong></p>
<p class="text"><font size="2" face="Arial, Helvetica, sans-serif"><a href="http://www.chipworks.com/reports/flyers/Altera/Altera_Stratix_EP1S25B672C6ES_SAR-0301-001.htm?M=5831&C=10"><strong>Altera
Stratix EP1S25B672C6ES PLD Structural Analysis </strong>SAR-0301-001</a><br>
TSMC's latest process - 9 layers of copper metallization and
0.13 µm technology.</font></p>
<p class="text"><font size="2" face="Arial, Helvetica, sans-serif"><strong><a href="http://www.chipworks.com/reports/flyers/Samsung/Samsung_K9K2G08U0M_Flash_SAR-0302-002.htm?M=5831&C=10">Samsung
K9K2G08U0M-YCB000 2Gb Flash Memory Structural Analysis </a></strong><a href="http://www.chipworks.com/reports/flyers/Samsung/Samsung_K9K2G08U0M_Flash_SAR-0302-002.htm?M=5831&C=10">SAR-0302-002</a><br>
The Samsung K9K2G08U0M-YCB000 is a 2112 Mbit NAND Flash memory.
The NAND cell provides a cost-effective solution for the solid-state
mass storage market. The device is dual 1Gb NAND chip in a
single package. The device was reportedly manufactured in
a 0.18µm CMOS process, with the actual gates measuring
0.13µm. </font></p>
<p class="text"><font size="2" face="Arial, Helvetica, sans-serif"><a href="http://www.chipworks.com/reports/flyers/Intel/Intel_GDPXA250B2C400_ARM_XSALE_SAR-0303-007.htm?M=5831&C=10"><strong>Intel
GDPXA250B2C400 Applications Processor Structural Analysis
</strong>SAR-0303-007</a><br>
The Intel GDPXA250B2C400 is a low power, high performance
32 bit RISC microprocessor compliant with the ARM™ v.5TE
architecture. This 400 MHz processor uses Intel’s X-scale
technology to achieve high core speeds at low power. It is
manufactured in 0.18µm 6 metal notched gate technology
with a 6T SRAM array.</font></p>
<p class="text"><font size="2" face="Arial, Helvetica, sans-serif"><a href="http://www.chipworks.com/reports/flyers/Panasonic/Panasonic_P2101V_CMOSImager_SAR-0302-005.htm?M=5831&C=10"><strong>Panasonic
P2101V CMOS Image Sensor Structural Analysis </strong>SAR-0302-005</a><br>
CMOS color image sensor structural analysis from Panasonic
P2101V 3G W-CDMA FOMA Cell Phone made in a 3 metal, 2 poly
silicon technology. The device is a full-color 367x290 pixel
CMOS image sensor. Equipped with an embedded camera that consists
of the CMOS image sensor and an image processor.</font></p>
<p class="text"><font size="2" face="Arial, Helvetica, sans-serif"><a href="http://www.chipworks.com/reports/flyers/infineon/Infineon_HYB25D128800AT_128M_DDR_SDRAM_SAR-0301-004.htm?M=5831&C=10"><strong>Infineon
HYB25D128800AT-7 128M DDR SDRAM Structural Analysis </strong>SAR-0301-004</a><br>
The Infineon HYB25D128800AT-7 128M DDR SDRAM was fabricated
using a trench DRAM design in 0.18µm technology. The
device was packaged in a 66-pin 400 mil plastic TSOP (type
II) package with gull-wing leads for surface mount applications.
</font></p>
<p class="text"><font size="2" face="Arial, Helvetica, sans-serif"><a href="http://www.chipworks.com/reports/flyers/Sharp/Sharp_IR3E11M1_LCD_Dvr_SAR-0210-003.htm?M=5831&C=10"><strong>Sharp
IR3E11M TFT LCD Gray Scale Driver Structural Analysis </strong>SAR-0210-003</a><br>
With a built-in high current common amplifier, the TFT LCD
Scale Reference Voltage IC compensates non-linearity transmittance
characteristic of a LCD panel by providing a high quality
of reference voltage. It has a 2 metal bipolar process.</font></p>
<p class="text"><font size="2" face="Arial, Helvetica, sans-serif"><a href="http://www.chipworks.com/reports/flyers/Sharp/Sharp_LH168T11_Display_Drv_SAR-0210.004.htm?M=5831&C=10"><strong>Sharp
LH168T11 TFT LCD Source Driver Structural Analysis </strong>SAR-0210-004</a><br>
The Sharp LH168T11 Display Driver was mounted on a tape substrate
with a molding compound. The device is manufactured in a 0.5µm
CMOS process with two levels of aluminum metallization and
one level of polycide.</font></p>
<p class="text"><font size="2" face="Arial, Helvetica, sans-serif"><strong>RF
and Power Devices</strong></font></p>
<p class="text"> <font size="2" face="Arial, Helvetica, sans-serif"><a href="http://www.chipworks.com/reports/flyers/Philips/Philips_BLF2022-90_UHF_LDMOS_Trans_SAR-0304-001.htm?M=5831&C=10"><strong>Philips
BLF2022-90 UHF Power LDMOS Transistor Structural Analysis
</strong>SAR-0304-001</a><br>
90W lateral diffusion (LD) MOS power transistor designed for
common source class-AB operation applicable in the 2000 to
2200 MHz frequency range, W-CDMA, CDMA and multi-carrier application,
base station application at frequencies from 211- to 2170
MHz. </font></p>
<p class="text"><font size="2" face="Arial, Helvetica, sans-serif"><strong><a href="http://www.chipworks.com/reports/flyers/infineon/Infineon_PTF102015_GOLDMOS_Field_Effect_Trans_SAR-0302-001.htm?M=5831&C=10">Infineon/Ericsson
PTF102015 GOLDMOS Field Effect Transistor Structural Analysis
</a></strong><a href="http://www.chipworks.com/reports/flyers/infineon/Infineon_PTF102015_GOLDMOS_Field_Effect_Trans_SAR-0302-001.htm?M=5831&C=10">SAR-0302-001</a><br>
The Infineon PTF102015 is a 30-watt internally matched GOLDMOS
FET intended for WCDMA applications from 2110 to 2170MHz.
</font></p>
<p class="text"><font size="2" face="Arial, Helvetica, sans-serif"><strong><a href="http://www.chipworks.com/reports/flyers/UltraRF/UltraRF_UGF21090FE_MOSFET_SAR-0301-002.htm?M=5831&C=10">Ultra
RF UGF21090F Power MOSFET Structural Analysis </a></strong><a href="http://www.chipworks.com/reports/flyers/UltraRF/UltraRF_UGF21090FE_MOSFET_SAR-0301-002.htm?M=5831&C=10">SAR-0301-002
</a><br>
The Ultra RF UGF21090FE is a 90W, 2.17 GHz, Broadband RF Power
N-channel Enhancement-Mode Lateral Diffusion MOSFET.</font></p>
<p class="text"><font size="2" face="Arial, Helvetica, sans-serif"><strong><a href="http://www.chipworks.com/reports/flyers/Toshiba/Toshiba_SFOR5J43_Thyristor_SAR-0302-004.htm?M=5831&C=10">Toshiba
SFOR5J43 Silicon Planar Thyristor Structural Analysis </a></strong><a href="http://www.chipworks.com/reports/flyers/Toshiba/Toshiba_SFOR5J43_Thyristor_SAR-0302-004.htm?M=5831&C=10">SAR-0302-004</a><strong><a href="http://www.chipworks.com/reports/flyers/Toshiba/Toshiba_SFOR5J43_Thyristor_SAR-0302-004.htm?M=5831&C=10">
</a></strong><br>
The Toshiba SFOR5J43 Thyristor was designed for low power
switching and control applications.</font></p>
<p class="text"><font size="2" face="Arial, Helvetica, sans-serif"><strong>MEMS
Device</strong></font></p>
<p class="text"><font size="2" face="Arial, Helvetica, sans-serif"><a href="http://www.chipworks.com/reports/flyers/STMicro/STMicro_LIS2L02AS_Accelerometer_SAR-0304-010.htm?M=5831&C=10"><strong>ST
Microelectronics LIS2L02AS 2-Axis/1g Acceleration Sensor Structural
Analysis </strong>SAR-0304-010</a><br>
The LIS2L02 device senses inclination in both the side-to-side
(roll) and forward-backward (pitch) directions, allowing the
sensing of acceleration or inclination in two directions,
such as anti theft systems, industrial production equipment,
robotic toys and automotive electronics. This is a detailed
analysis of the MEM sensor in the device.<br>
</font></p>
<p class="text"><font size="2" face="Arial, Helvetica, sans-serif">If
you are interested in a device you do not see on our website,
please send your request to <a href="mailto:info@chipworks.com?%20Subject=New CAR Reports 04 15 20MK">info@chipworks.com</a>.</font></p>
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<p class="whitetext"><font size="2" face="Arial, Helvetica, sans-serif"><a href="http://www.chipworks.com/mail/04_2003/CAR_April_15.htm?M=5831&C=10"><strong>View
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